Manufacturers
IRF6718L2 MOSFET in Large Can DirectFET® Package
The IRF6718L2 features IR’s latest generation silicon technology in a new large can DirectFET package to deliver extremely low RDS(on) of only 0.5mOhm (typical) at 10V VGS in a 60 percent smaller footprint and 85 percent lower profile than a D2PAK. The new device significantly reduces conduction losses associated with the pass element in ORing or hot swap applications to dramatically improve the efficiency of the entire system.
Features
- RoHS Compliant Containing no Lead and Bromide
- Dual Sided Cooling Compatible
- Ultra Low Package Inductance
- Very Low RDS(on) for Reduced Conduction Losses
- Optimized for Active ORing/eFUSE Applications
- Compatible with existing Surface Mount Techniques
Advantages
- The IRF6718L2 is IR’s first device hosted in a large can DirectFET package and with its significantly lower RDS(on) than competing devices achieves excellent efficiency and superior thermal performance for high density DC-DC applications such as servers in the smaller footprint than a D2PAK.
- Board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss.
- The IRF6718L2 provides an improved safe operating area (SOA) capability for eFUSE and hot swap circuits.
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Support Material
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