AUIRS2016S High Side Driver With Internal Vs Recharge

The AUIRS2016S is a high-voltage power MOSFET high-side driver featuring an internal Vs-to-GND recharge NMOS. The device’s output driver features a 250mA high pulse current buffer stage. The channel can be used to drive an N-channel power MOSFET in the high-side configuration, operating up to 150V above ground. The new IC uses a proprietary latch immune CMOS technology featuring exceptional negative Vs immunity to deliver the ruggedness and reliability essential for harsh environments and automotive under-the-hood applications. 

• One high side output and internal low-side Vs recharge
• CMOS Schmitt trigger inverted input with pull up resistor
• CMOS Schmitt trigger inverted reset with pull down resistor
• 5V compatible logic level inputs

Immune to –Vs spike and tolerant to dVs/dt

Advantages

• Proprietary HVIC technology enables ruggedized monolithic construction and an industry benchmarking negative voltage spike immunity for fail proof operation even under extreme switching conditions and short circuit events.
• The IC is qualified according to AEC-Q100 standards and features an environmentally friendly, lead-free and RoHS compliant bill of material and are part of International Rectifier’s Zero-Defect initiative.

The AUIRS2016S is set up to be in line with typical change management requirements of the automotive market.