Automotive Qualified IGBT, AUIRG7CH80K6B-M
The AUIRG7CH80K6B-M 1200V is an insulated gate bipolar transistor (IGBT) with Solderable Front Metal (SFM) for high-current, high-voltage automotive inverter modules used in electric vehicles (EV) and hybrid electric vehicles (HEV), as well as medium power drives.
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Features
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Solderable front metal
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Low VCE(on)
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Low switching losses
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Maximum junction temperature up to 175°C
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Short circuit rated up to 6µs
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Square RBSOA
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Positive VCE(on) temperature co-efficient
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Tight parameter distribution |
Advantages
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The AUIRG7CH80K6B-M utilizes IR’s latest-generation field stop trench technology to significantly reduce conduction and switching losses. Additionally, the new device’s solderable front metal (SFM) allows dual-sided cooling to improve thermal performance and enables wire bonds to be eliminated to achieve higher reliability.
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Traditionally wire bonds are a potential source of failure in automotive inverter modules. The AUIRG7CH80K6B-M with its solderable front metal allows the use of wire bond-less packaging techniques that together with the dual-sided cooling feature, provide improved thermal performance, higher efficiency and extend the reliability of inverter modules.
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The device is qualified according to automotive standards and is part of IR’s automotive quality initiative targeting zero defects.
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The AUIRG7CH80K6B-M is only available in die-form. |
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Support Material
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